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| Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1064 DESCRIPTION With TO-220 package Complement to type 2SD1505 Low collector saturation voltage APPLICATIONS Designed for use in low frequency power amplifier applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER ANG INCH Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature Collector-base voltage EMIC ES Open emitter Open base Open collector CONDITIONS OND TOR UC VALUE -60 -50 -5 -3 -4.5 -0.5 UNIT V V V A A A W ae ae TC=25ae 30 150 -55~150 Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER CONDITIONS MIN TYP. 2SB1064 SYMBOL MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-1mA ,IB=0 -50 V V(BR)CBO Collector-base breakdown voltage IC=-50|I A ,IE=0 -60 V V(BR)EBO Emitter-base breakdown voltage IE=-50|I A ,IC=0 -5 V VCEsat Collector-emitter saturation voltage IC=-2A; IB=-0.2A -1.0 V VBEsat Base-emitter saturation voltage IC=-2A; IB=-0.2A -1.5 V ICBO Collector cut-off current VCB=-40V; IE=0 -1.0 |I A IEBO Emitter cut-off current hFE COB DC current gain VEB=-4V; IC=0 -1.0 |I A IC=-0.5A ; VCE=-3V 60 Output capacitance fT Transition frequency HAN INC SEM GE IE=0 ; VCB=-10V,f=1MHz IC=-0.5A ; VCE=-5V OND IC TOR UC 320 50 70 pF MHz 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB1064 SEM GE HAN INC OND IC TOR UC Fig.2 Outline dimensions(unindicated tolerance:A 0.10 mm) 3 |
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